| PART |
Description |
Maker |
| STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1 ST |
N-CHANNEL 600V-0.65ohm-10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?┬ower MOSFET
N-CHANNEL 600V-0.65ohm-10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET N沟道600V.65ohm - 10A条TO-220/FP/D2PAK/I2PAK/TO-247齐纳保护SuperMESH⑩功率MOSFET
N-CHANNEL Power MOSFET
N-CHANNEL 600V-0.65ohm-10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 600V - 0.65 OHM - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
|
STMicroelectronics N.V.
ST Microelectronics
|
| MTN2N70I3 |
N-Channel Enhancement Mode Power MOSF
|
Cystech Electonics Corp.
|
| STGP10NC60H P10NC60H |
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH IGBT
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH⑩ IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| BTA10-600B BTA10-600BW BTA10-600C BTA10-600CW BTA1 |
10A triac, 600V
Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:22-55
10A TRIACS 10A条双向可控硅
10A triac, 800V
|
SGS Thomson Microelectronics
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STGP10NC60H06 STGP10NC60H GP10NC60H |
N-channel 10A - 600V - TO-220 Very fast PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGP10NC60HD STGB10NC60HD GB10NC60HD GP10NC60HD |
N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGP10NB60SD GP10NB60SD |
N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STB11NM60N-1 |
N-channel 600V - 0.37- 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmeshPower MOSFET
|
意法半导
|
| STP12NK60Z |
N-CHANNEL 600V - 0.53Ohm - 10A TO220/TO-220FP ZENER-PROTECTED SUPERMESH™ MOSFET
|
ST Microelectronics, Inc.
|
| RJQ6021DPM |
600V - 10A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
